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High Purity Aluminum oxide Al2O3 for Semiconductor filler
High Purity Aluminum oxide Al2O3 for Semiconductor filler
High Purity Aluminum oxide Al2O3 for Semiconductor filler
High Purity Aluminum oxide Al2O3 for Semiconductor filler
High Purity Aluminum oxide Al2O3 for Semiconductor filler
High Purity Aluminum oxide Al2O3 for Semiconductor filler
High Purity Aluminum oxide Al2O3 for Semiconductor filler

High Purity Aluminum oxide Al2O3 for Semiconductor filler

US $1500.00 -US $2000.00
  • Delivery:
  • Minimum order quantity:1
  • Supply Ability:1000.0 / Month
  • Country of Origin:Tianjin port or Any Chinese Port
  • Categories: Aluminum oxide

    Product Description

    • Melting point:2050 ℃
    • Boiling point:2980℃
    • Molecular Weight:102
    • Specific gravity:2.5-3.95g / cm3
    • Classification:ALUMINA
    • Grade Standard:Electron Grade
    • Grade Standard:Industrial Grade
    • Appearance:White powder
    • Application:Industrial
    • Place of Origin:CN
    • Brand Name:SuoYi
    • Purity:99%
    • Other Names:Alumina
    • EINECS No.:215-691-6
    • MF:Al2O3
    • CAS No.:1344-28-1

    High Purity Aluminum oxide Al2O3 for Semiconductor filler

    Features:

    1)High filling: Particle size distribution is reasonable, filling efficiency as resin filler is high, and compound of low viscosity and good fluidity can be made.

    2)High thermal conductivity: Filling degree is high. Compared with the thermal conductivity of crystalline silicon, that of mixture is higher.

    3)Low wear rate: It appears spherical. It wears less on the mixer and molding tool.

    4)Electrical and moisture resistance: There is a very small content of ion impurities, such as Na and Cl, so it has good electrical and moisture resistance.

    5)Particle Morphology: Equant diameter sphere, High surface smoothness

    IMG_20190308_104828.jpg

     Main Technical Parameters of SY-QW Series Spherical Alumina Filler:

    D50(μm)Specific Surface Area(m2/g)Chemical Composition (wt/%)Bulk Density(g/cm3)L.O.I.
    (0-1100)
    SiO2(%)Fe2O3(%)T-Na2O(%)EC(μS/cm)Na+(ppm)Cl-(ppm)
    QW-033±0.50.7≤0.10≤0.03≤0.015≤8≤8≤11.0≤0.03
    QW-055±10.6≤0.10≤0.03≤0.015≤8≤8≤11.3≤0.03
    QW-109±10.4≤0.10≤0.03≤0.015≤8≤8≤11.6≤0.03
    QW-2020±10.2≤0.05≤0.02≤0.01≤6≤6≤0.52.1≤0.02
    QW-3028±20.2≤0.05≤0.02≤0.01≤5≤6≤0.52.1≤0.02
    QW-4540±20.2≤0.05≤0.02≤0.01≤3≤6≤0.52.2≤0.02

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    1)Heat sink: radiating substrate filler, heat sinking oil, phase change film

    2)Semiconductor filler

    3)Special air abrasive

    4)Organosilicon heat sinking adhesive and mixture filler

    5)Ceramic filter membrane 6)Coated powder, etc.

     
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